PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • The present invention relates generally to semiconductor devices, and more particularly relates to techniques for forming an improved substrate contact for use in a metal-oxide-semiconductor device.
http://www.w3.org/ns/prov#wasQuotedFrom
  • google.fr