| http://www.w3.org/ns/prov#value | - As illustrated in FIG. 3F, polysilicon film 109 of 2000 to 4000 ??? in thickness is deposited on oxide film 108 by the LP-CVD method and it is doped with N-type impurities such as phosphorus, and then polysilicon film 109 is patterned to form a capacitor electrode.
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