| http://www.w3.org/ns/prov#value | - Accordingly, in FIG. 4 a, there is depicted an arbitrary section 10 of a substrate 20 (for instance an SOI wafer) comprising an upper layer 14 and a lower layer 12 of a semiconductive material, for example silicon and/or germanium, and a layer 13 of a dielectric material sandwiched therebetween.
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