| http://www.w3.org/ns/prov#value | - The principle of the invention can be applied to a CCD or CCD-like structure (photo gate, charge injection device (CID), charge sweep device(CSD)) where the collecting junction is an inversion layer or buried channel beneath a CCD-electrode (thus a surface channel CCD or a buried channel CCD. The collection junction (or part thereof) can be thought to be replaced by such structure.
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