About: http://webisa.webdatacommons.org/407261386

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	FIELD OF THE INVENTION The present invention relates generally to semiconductor devices, and more particularly relates to techniques for improving high-frequency performance in a metal-oxide-semiconductor (MOS) device.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com