| http://www.w3.org/ns/prov#value | - Above each of the gate electrode 25, the N-type source region 18, the N-type drain region 19, the P-type source region 20, the P-type drain region 21, the P-type highly concentrated impurities region 27, and the N-type highly concentrated impurities region 28, there is formed a silicided region 29 to reduce contact resistance. [0080] In the region except the channel region, the source regions 18 a
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