| http://www.w3.org/ns/prov#value | - band engineered superlatticeUS7435988Jan 25, 2005Oct 14, 2008Mears Technologies, Inc.Semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channelUS7436026Sep 14, 2004Oct 14, 2008Mears Technologies, Inc.Semiconductor device comprising a superlattice channel vertically stepped above source and drain regionsUS7446002May 25, 2005Nov 4
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