| http://www.w3.org/ns/prov#value | - 199720 Abr 1999International Business Machines CorporationSilicon sidewall etchingUS58997272 May 19964 May 1999Advanced Micro Devices, Inc.Method for forming a field dielectricUS590269025 Feb 199711 May 1999Motorola, Inc.Passivation layer at least partially surrounding the non-volatile magneto-resistive memory, the passivation layer including ferrite materials for shielding the non-volatile magnet
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