| http://www.w3.org/ns/prov#value | - Then a gate electrode 103 is formed of a metal, such as Cr, Mo or others, or an impurity added silicon thin film, and impurities, such as P, B or others, are added to the semiconductor layer 102 with a required energy by ion implantation, doping or other techniques to form the source region and the drain region by self-alignment.
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