| http://www.w3.org/ns/prov#value | - The manufacturing method according to claim 1, wherein the step of causing the deposition nuclei to grow is a heat treatment step which is performed in an atmosphere including at least one of hydrogen, helium, and argon and in which the wafer temperature is kept constant in a range of 850??? C. to 980??? C. for 0.5 to 60 minutes.
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