| http://www.w3.org/ns/prov#value | - The FinFET is an ideal device architecture for improving electrostatic integrity and total inversion charge and it is possible, with volume inversion depending on the body dimension, these could result in a higher drive current, excellent SCE, near-ideal sub-threshold slope (SS~60mV/decade) and a very small drain-induced barrier lowering (DIBL) [9].
|
