About: http://webisa.webdatacommons.org/412011430

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	The present invention is a method of forming a transistor on a semiconductor substrate in which silicon sidewalls are formed adjacent to first sidewall spacers next to a gate electrode.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com