| http://www.w3.org/ns/prov#value | - Of course, the gate insulating film 107 can be used as a single layer of the insulating film including silicon or a laminate structure thereof. [0080] When a silicon oxide film is used, TEOS (tetraethyl ortho silicate) and O2 are mixed by a plasma CVD method, a reactive pressure is set to be 40 Pa, and a substrate temperature is set to be 300??? C. to 400??? C.
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