| http://www.w3.org/ns/prov#value | - If the workpiece 302 comprises an SOI substrate 302, the shallow trench isolation region 340 may be formed by patterning a top layer of semiconductive material (not shown) of the workpiece 302, and filling the patterned second layer of semiconductive material with an insulating material such as silicon dioxide, although other materials may be used, for example.
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