PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • Typically, the ILD film 320 comprises a form of oxide, such as TEOS or BPSG. The integrated circuit can then be completed by back-end or metallization process flows. [0049] FIGS. 4-6 illustrate the experimental results of crystallizing the amorphous electrode plate, particularly the bottom electrode plate, by using different annealing conditions.
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