| http://www.w3.org/ns/prov#value | - As shown in FIG. 4D, an inorganic material, such as SiOx or SiNx, or an organic materia,l such as BCB(benzocyclobutene) or acryl, is deposited over the source and drain electrodes 302 a and 302 b including the semiconductor layer 305 and over the entire upper surface of the gate insulating layer 308 to form a passivation layer 311.
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