| http://www.w3.org/ns/prov#value | - In this case, the gate 906 can be set up in the manner described for example in connection with the drain-extended NMOS field-effect transistor 800 shown in FIG. 8A. The gate 906 furthermore has an electrical connection G, it being possible for electrical contact to be made with the gate 906 by means of said connection G.
|
