| http://www.w3.org/ns/prov#value | - In this embodiment, the gate insulating film 807 is formed of a silicon oxynitride film (composition ratio: Si=32%, O=59%, N=7%, H=2%) having a thickness of 110 nm with the plasma CVD. Of course, the gate insulating film may be formed of not only the silicon oxynitride film, but also other insulating film including silicon in a single-layer structure or in a laminated-layer structure.
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