| http://www.w3.org/ns/prov#value | - Referring to FIGS. 2 and 5-7, in the present example layer 42 e is formed on substrate 42 employing sequential deposition techniques and using an aluminum-containing precursor consisting of AlRm, where R is a ligand and m is an integer, and an oxygen-containing precursor B. Specifically, the initial surface of substrate 42 presents an active ligand to precursor AlRm.
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