| http://www.w3.org/ns/prov#value | - INTRODUCTIONThe move towards smaller geometries in modern ul-tralarge scale integrated ??ULSI?? processes will require a bet-ter control of dopant distribution over the Si wafer surface.Unlike n-type dopants in silicon, shallow acceptors like bo-ron can be rendered electrically inactive by pairing with hy-drogen, or metals such as copper or iron.
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