| http://www.w3.org/ns/prov#value | - Alternatively, the emitter forming method may be such that the n+ -type emitter region 16A is formed by diffusion from a vapor phase or by ion implantation, and that a conductive material such as aluminum is brought into electrical contact with the region 16A as an emitter electrode 22 directly through the intervention of a barrier metal such as platinum silicide.
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