| http://www.w3.org/ns/prov#value | - First addressable line 232 may be a metal such as magnesium, antimony, aluminum, silver, copper, nickel, gold, platinum, or palladium and form reasonable barrier heights disposed on the silicon dioxide surface, and device structure 236 may then be a lightly doped n-type polysilicon or amorphous silicon layer to complete the formation of the Schottky barrier diode at rectifying interface 238.
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