| http://www.w3.org/ns/prov#value | - In this case, an insulating film such as SiO2 is formed on the upper surface of the ridge portion outside the crystal growth device, and the n-AlGaN first regrown low-temperature buffer layer 10 and the n-AlGaN current blocking layer 11 are then grown on the side surfaces of the ridge portion and on the flat portion of the p-AlGaN cladding layer 8 inside the crystal growth device.
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