| http://www.w3.org/ns/prov#value | - r-epitaxial-substrate manufacturing method in Embodiment Mode 3 of the present invention; andFIG. 7 is a sectional diagram illustrating a compound semiconductor epitaxial substrate in Embodiment Mode 3 of the present invention.DETAILED DESCRIPTION OF THE INVENTIONHereinafter, referring to the figures, embodiments and examples of the present invention will be described.
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