About: http://webisa.webdatacommons.org/433773591

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	With the above-described step, a transistor such as a FET (Field Effect Transistor) can be formed on the strained-Si layer so that a semiconductor device having a transistor having the structure shown in FIG. 35 is obtained.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com