| http://www.w3.org/ns/prov#value | - For example, n-type impurities, such as arsenic or phosphorus, may be implanted at a dosage of about 5???1014 atoms/cm2 to about 1???1016 atoms/cm2 and an implantation energy of about 5 KeV to about 30 KeV. After the implant process is complete, gate electrodes 1320 may include silicon doped predominately, or only, with n-type impurities to form n+ gates, as illustrated in FIG. 14.
|
