| http://www.w3.org/ns/prov#value | - A device according to claim 11, wherein said first gate wiring and said second gate wiring are formed of one of films each mainly containing an element selected from the group consisting of W, WSix, Al, Cu, Ta, Cr, Mo and poly-Si which is doped with impurity elements that impart a conductive type, or a laminate film formed of said films. 18.
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