| http://www.w3.org/ns/prov#value | - The gallium nitride may be deposited by the vapor phase epitaxy technique described in the article The Preparation and Properties of Vapor-Deposited Single-Crystalline GaN by H. P. Maruska and J. J. Tietjen published in APPLIED PHYSICS LETTERS, Volume 15, page 327 (1969.) The N-type gallium nitride is undoped and the insulating gallium nitride is deposited with an acceptor impurity such as zinc
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