| http://www.w3.org/ns/prov#value | - Thus, a nonvolatile memory cell is disclosed comprising a semiconductor substrate including a source and a drain region with a channel therebetween, a floating gate formed in a first polysilicon layer and extending over a portion of said channel with a thin insulating layer therebetween, a control gate formed in a second polysilicon layer and extending over another portion of the channel region.
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