| http://www.w3.org/ns/prov#value | - The invention also consists in a method of treating a semiconductor wafer or other work piece by an active ion technique or by chemical vapour deposition in which the work piece is placed in a vacuum chamber which is evacuated to a low pressure, a selected gas is introduced under control, a gas plasma is created within the chamber by means of an external induction coil, the plasma intensity is c
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