About: http://webisa.webdatacommons.org/438408958

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	Another advantage of the present invention is a method of forming MOS-based semiconductor devices and transistors with metal silicide-contacted shallow source and drain regions exhibiting very low junction leakage.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com