About: http://webisa.webdatacommons.org/440572430

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	The present invention relates to a method for producing a semiconductor substrate, and more particularly to a method for producing a semiconductor substrate having a strained Si layer formed on a SiGe layer.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com