| http://www.w3.org/ns/prov#value | - The mask forming step of the present embodiment is a process for forming etching masks 101 on the opposite surfaces of a silicon substrate 100 having a plane orientation in the (100) direction, as shown in FIG. 12A. The mask pattern of a rectangular shape shown in FIG. 12A has its respective sides formed in alignment with the <110> direction of the silicon substrate 100.
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