PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • During fabrication of device 100 of FIGS. 1 and 2, a trench process and implant technique are performed on a substrate, such as a silicon wafer, to define active area 106 and nwell 112 as is shown at 150.
http://www.w3.org/ns/prov#wasQuotedFrom
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