About: http://webisa.webdatacommons.org/444442525

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	The present invention generally relates to dry etching methods for making electronic devices such as semiconductor devices or the like, and especially to a dry etching technique for etching silicon carbide (SiC).
http://www.w3.org/ns/prov#wasQuotedFrom	google.com.au