| http://www.w3.org/ns/prov#value | - In the case where the MOSFET to be manufactured is a p-channel MOSFET, implantation of ions 705 of impurity BF2 + is then carried out under the condition of a low dose (about 1???1013 cm-2) and an acceleration voltage of about 30 KeV (FIG. 1B).
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