| http://www.w3.org/ns/prov#value | - Accordingly, at portions other than the region where the mask is formed, the ion of n-type impurity of high concentration is implanted into the semiconductor layer below the insulation film GI so that the drain and source regions are formed. [0134] By ashing the remaining photo resist film, the surface of the photo resist film is removed while a portion of the surface is made to remain.
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