| http://www.w3.org/ns/prov#value | - ing: a memory array having a number of access transistors, at least one access transistor including a gate coupled to a dielectric film containing a HfO2/ZrO2 nanolaminate, the dielectric film containing a HfO2/ZrO2 nanolaminate disposed on a body region between a first source/drain region and a second source/drain region. 24.
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