| http://www.w3.org/ns/prov#value | - In the suggested method, after the formation of the titanium film 8 as illustrated in FIG. 1C, a photolithography step is carried out to thereby form a mask out of a photoresist film on the titanium film 8 in a region other than regions such as the device isolation regions 2 and the insulating spacer 6 onto which a silicide layer is not allowed to grow.
|
