| http://www.w3.org/ns/prov#value | - Instead of silicon oxide, the insulating isolation layer 5 can be conveniently formed from other insulating materials such as silicon carbide (SiC) or silicon nitride (Si N The silicon oxide layer 5 is pyrolytically deposited on the surface of the wafer 10 or thermally grown from the surface of the substrate if silicon is used as the substrate material.
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