| http://www.w3.org/ns/prov#value | - An oxide film 408 would then be formed over substrate 400 including on top of monocrystalline silicon substrate 402 as well as over and around gate electrode 406 as shown in FIG. 4B. In an embodiment of the present invention, the oxide film is a silicon oxide or silicon oxynitride film formed by a high temperature oxide (HTO) process as described above.
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