| http://www.w3.org/ns/prov#value | - Further, referring to FIG. 5B, an oxide film 310 is formed on the surface of the n-type second silicon substrate 132 using a thermal oxidation process or the like, and then a p-type dopant, for example boron (B) with a dopant concentration of about 5???1016 cm???3, is doped from the side of the oxide film 310 into the second silicon substrate 132 in order to form a p-type region.
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