| http://www.w3.org/ns/prov#value | - A III-V nitride semiconductor expressed by a general formula, InxAlyGa1-x-yN (0???x???1, 0???y???1, and 0???x+y???1), is applicable to a light emitting device, such as a visible-range light emitting diode, a short-wavelength semiconductor laser diode, or the like, because gallium nitride (GaN) has a relatively large energy gap of 3.4 eV at room temperature.
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