| http://www.w3.org/ns/prov#value | - According to an aspect of the present invention, there is provided to a SOI device, comprising: a SOI wafer having a stack structure of a silicon substrate, a buried oxide layer having a first and a second contact holes and a silicon layer; an isolation layer formed in the silicon layer to define a device formation region; a transistor including a gate formed over the device formation region of th
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