| http://www.w3.org/ns/prov#value | - A conductor-insulator-semiconductor field effect transistor (hereinafter referred to by the term CISFET) 10 suitable for utilization in the counter of this invention is depicted in FIG. 1 and generally includes a semiconductive, e.g. silicon, substrate 12 of P-type conductivity having n-type conductivity source and drain electrodes 14 and 16 respectively, diffused therein by conventional technique
|
