| http://www.w3.org/ns/prov#value | - Accordingly, it is an object of the present invention to provide an insulated gate bipolar transistor capable of impeding or controlling a change in the threshold voltage before and after the irradiation of an ionizing radiation such as an electron beam and of making the best trade-off relation between the ON resistance value and the turn-off time while latch-up is effectively prevented, and havin
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