| http://www.w3.org/ns/prov#value | - con carbide semiconductor deviceUS8415671Apr 16, 2010Apr 9, 2013Cree, Inc.Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devicesUS8432012Mar 18, 2011Apr 30, 2013Cree, Inc.Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating sameUS8541787Jul 15, 2009Sep 24, 2013Cree, Inc.High breakd
|
