| http://www.w3.org/ns/prov#value | - According to the present invention, the foregoing and other advantages are achieved in part by a method of manufacturing a multi-metal layer semiconductor device, the method comprising forming an uppermost metal layer over a substrate; forming a silicon oxynitride layer on the uppermost metal layer; forming a photoresist pattern on the silicon oxynitride layer; patterning the uppermost metal layer
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