| http://www.w3.org/ns/prov#value | - According to the method for manufacturing the semiconductor crystal of the present invention, a semiconductor base of the present invention (a laminate consisting of substrate 1 and semiconductor crystal 2 with cavity 13 between them), as shown in FIG. 1( c), FIG. 2( c), FIG. 6( c) and FIG. 7( c), is manufactured and substrate 1 and semiconductor crystal 2 are separated at a part including cavity
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