| http://www.w3.org/ns/prov#value | - A chemical vapor deposition process for forming a SiO2 layer on a substrate comprising reacting water with a silicon precursor compound having the structure SiX4, Si(NR2)4, Si(OH)a(OR)a(OR)4-a or SiHb(OR)4-b wherein R is an alkyl group, each X is independently a halogen atom, and a and b are numbers from 0-4, in the presence of the substrate at a temperature of between about 290 K and 350 K and in
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